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          首頁 >NCD57080>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NCD57080

          Isolated High Current IGBT/MOSFET Gate Driver

          NCx57080y, NCx57081y are high?current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

          文件:1.19251 Mbytes 頁數(shù):24 Pages

          ONSEMI

          安森美半導(dǎo)體

          NCD57080

          Isolated High Current Gate Driver

          NCD57080A, NCD57080B and NCD57080C are high?current single channel IGBT gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer opti ? High Peak Output Current (+8 A/-8 A)\n? Improves system efficiency\n? Short Propagation Delays with Accurate Matching\n? Improves PWM signal integrity\n? High Transient & Electromagnetic Immunity\n? Ruggedness in fast slew rate high voltage and high current switching applications\n? 3.75 KVrms On-;

          ONSEMI

          安森美半導(dǎo)體

          NCD57080A

          Isolated High Current IGBT/MOSFET Gate Driver

          NCx57080y, NCx57081y are high?current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

          文件:1.18417 Mbytes 頁數(shù):24 Pages

          ONSEMI

          安森美半導(dǎo)體

          NCD57080ADR2G

          Isolated High Current IGBT/MOSFET Gate Driver

          NCx57080y, NCx57081y are high?current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

          文件:1.18417 Mbytes 頁數(shù):24 Pages

          ONSEMI

          安森美半導(dǎo)體

          NCD57080B

          Isolated High Current IGBT/MOSFET Gate Driver

          NCx57080y, NCx57081y are high?current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

          文件:1.18417 Mbytes 頁數(shù):24 Pages

          ONSEMI

          安森美半導(dǎo)體

          NCD57080BDR2G

          Isolated High Current IGBT/MOSFET Gate Driver

          NCx57080y, NCx57081y are high?current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

          文件:1.18417 Mbytes 頁數(shù):24 Pages

          ONSEMI

          安森美半導(dǎo)體

          NCD57080C

          Isolated High Current IGBT/MOSFET Gate Driver

          NCx57080y, NCx57081y are high?current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

          文件:1.18417 Mbytes 頁數(shù):24 Pages

          ONSEMI

          安森美半導(dǎo)體

          NCD57080CDR2G

          Isolated High Current IGBT/MOSFET Gate Driver

          NCx57080y, NCx57081y are high?current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio

          文件:1.18417 Mbytes 頁數(shù):24 Pages

          ONSEMI

          安森美半導(dǎo)體

          NCD57080A

          Isolated High Current IGBT Gate Driver

          文件:646.81 Kbytes 頁數(shù):24 Pages

          ONSEMI

          安森美半導(dǎo)體

          NCD57080ADR2G

          Isolated High Current IGBT Gate Driver

          文件:646.81 Kbytes 頁數(shù):24 Pages

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Power Switch:

            IGBT

          • Number of Outputs:

            1

          • Topology:

            Single

          • Isolation Type:

            Galvanic Isolation

          • Vin Max (V):

            20

          • VCC Max (V):

            30

          • Drive Source/Sink Typ (mA):

            6000/6000

          • Rise Time (ns):

            10

          • Fall Time (ns):

            6

          • tp Max (ns):

            60

          • Package Type:

            SOIC-8

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          更多NCD57080供應(yīng)商 更新時間2026-1-20 10:07:00
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