Bias Scheme for NBB-Series Amplifiers

Introduction RFMD’s NBB-series amplifiers are monolithic integrated circuits (ICs) using InGaP/GaAs HBT technology. The NBB-series uses a Darlington-pair transistor configuration with bias and feedback resistors properly selected to determine the gain, input and output match and bias (both voltag

文件：45.78 Kbytes 頁(yè)數(shù)：4 Pages

RFMD

威訊聯(lián)合

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件：74 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.95 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件：74 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體