絲?。?strong>N65；Package：SOT-23；NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR

Features ? Epitaxial Planar Die Construction ? Complementary PNP Types Available (DDTB) ? Built-In Biasing Resistors, R1, R2 ? Lead, Halogen and Antimony Free, RoHS Compliant ? Green Device (Notes 2 and 3)

文件：79.88 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導體

N-channel MOSFET 650V, 5.5A, 2.1?

Description The N6504NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 2.1? MAX. (VGS = 10 V, ID = 2.75 A) ? Low input capacitance Ciss = 950pF TYP. (VDS = 10V, VGS = 0 V) ? High current ID(DC) = ±5.5

文件：303.85 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

N-channel MOSFET 650V, 5.5A, 2.1?

Description The N6504NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 2.1? MAX. (VGS = 10 V, ID = 2.75 A) ? Low input capacitance Ciss = 950pF TYP. (VDS = 10V, VGS = 0 V) ? High current ID(DC) = ±5.5

文件：303.85 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

N-channel MOSFET 650V, 7.5A, 1.3?

Description The N6506NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 1.3? MAX. (VGS = 10 V, ID = 3.75 A) ? Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) ? High current ID(DC) = ±7.

文件：297.45 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

N-channel MOSFET 650V, 7.5A, 1.3?

Description The N6506NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 1.3? MAX. (VGS = 10 V, ID = 3.75 A) ? Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) ? High current ID(DC) = ±7.

文件：297.45 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

N-channel MOSFET 650V, 9.5A, 0.85?

Description The N6508NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 0.85? MAX. (VGS = 10 V, ID = 4.75 A) ? Low input capacitance Ciss = 2160pF TYP. (VDS = 10V, VGS = 0 V) ? High current ID(DC) = ±9

文件：448.96 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

N-channel MOSFET 650V, 9.5A, 0.85?

Description The N6508NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 0.85? MAX. (VGS = 10 V, ID = 4.75 A) ? Low input capacitance Ciss = 2160pF TYP. (VDS = 10V, VGS = 0 V) ? High current ID(DC) = ±9

文件：448.96 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

Incandescent

Description T-1? Midget Groove Lamp

文件：125.83 Kbytes 頁數(shù)：1 Pages

CMLINNOVATIVETECHNOLOGIES

N PANEL RECEPT. JACK

文件：170.08 Kbytes 頁數(shù)：1 Pages

AMPHENOL

安費諾