絲?。?strong>N60；Package：SOT-23；NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR

Features ? Epitaxial Planar Die Construction ? Complementary PNP Types Available (DDTB) ? Built-In Biasing Resistors, R1, R2 ? Lead, Halogen and Antimony Free, RoHS Compliant ? Green Device (Notes 2 and 3)

文件：79.88 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>N60；Package：DFN3030-8B；N-Channel 60-V (D-S) MOSFET

文件：284.27 Kbytes 頁數(shù)：5 Pages

LRC

樂山無線電

絲?。?strong>N60；Package：DFN3333-8A；N-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology.

文件：434.33 Kbytes 頁數(shù)：5 Pages

LRC

樂山無線電

絲?。?a target="_blank" title="Marking" href="/n6066ss/marking.html">N6066SS；Package：SO-8；N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? Backlighting ? Power Management Functions ? DC-DC Converters Features an

文件：492.1 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲印：N6040SS；Package：SO-8；N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ? Backlighting ? Power management functions ? DC-DC converters Features and Benefits ? 100 Unclamp

文件：612.78 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲印：N6069；Package：SOT223；60V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: ? Motor controls ? Transformer driving switches ? DC-DC converters ? Power management functions ? Un

文件：694.07 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲印：N6035SDW；Package：PowerDI5060-8；60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power management functions DC-DC converters Features and Benefits ? Rated to +175°C –

文件：752.87 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/n600r65/marking.html">N600R65；Package：TO-220F-3L；N-Channel Super Junction MOSFET

文件：575.56 Kbytes 頁數(shù)：8 Pages

KODENSHI

可天士

絲?。?a target="_blank" title="Marking" href="/n600r70/marking.html">N600R70；Package：TO-220F-3L；N-Channel Super Junction MOSFET

文件：575.44 Kbytes 頁數(shù)：8 Pages

KODENSHI

可天士

N-channel MOSFET 600V, 1A, 9.3Ω

Description The N6001NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A) ? Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V) ? High current ID(DC) = ±1.0

文件：262.28 Kbytes 頁數(shù)：8 Pages

RENESAS

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