絲?。?strong>N30；Package：DFN3030-8B；N-Channel 30-V (D-S) MOSFET

文件：1.19717 Mbytes 頁數(shù)：5 Pages

LRC

樂山無線電

絲印：N3009SS；Package：SO-8；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ? Motor Control ? Backlighting ? Power Management Functions ? DC-DC Converters

文件：478.49 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲印：N306AD；Package：TO-251AA；N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：254.57 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：N306AD；Package：TO-252AA；N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：254.57 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/n3030ls/marking.html">N3030LS；Package：SO-8；SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

文件：183.28 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

文件：122.52 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

文件：253.25 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：269.83 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching fre

文件：269.83 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

Hermetic Environmental Sealing Boots for Switches & Potentiometers

Typical Applications ? Marine instrument panels ? Military equipment and vehicles ? Food processing equipment ? Air conditioning systems ? Heat pumps ? Off-road construction equipment ? Machine tool controls ? Spas/hot tubs ? Commercial laundry equipment ? Construction elevator controls

文件：2.77664 Mbytes 頁數(shù)：21 Pages

APM