絲印：N06；Package：SOT563；NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Complementary PNP Types Available (DDA) - Built-In Biasing Resistors - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3)

文件：306.44 Kbytes 頁(yè)數(shù)：6 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>N06；Package：SOT-23；30V N-Channel Enhancement-Mode MOSFET

文件：407.74 Kbytes 頁(yè)數(shù)：4 Pages

FS

絲?。?a target="_blank" title="Marking" href="/n060at/marking.html">N060AT；Package：HSMT8；Pch -80V -18A Power MOSFET

Features 1) Low on - resistance 2) High Power small mold Package (HSMT8) 3) Pb-free plating ; RoHS compliant 4) 100% Rg and UIS tested 5) Halogen Free Application Switching Motor drives

文件：2.48924 Mbytes 頁(yè)數(shù)：13 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/n065r65/marking.html">N065R65；Package：TO-247；N-Channel Super-junction MOSFET

文件：379.05 Kbytes 頁(yè)數(shù)：8 Pages

KODENSHI

可天士

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：294.87 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

MOS FIELD EFFECT TRANSISTOR

Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance ? RDS(on)1= 25 m?MAX. (VGS=10 V, ID= 15 A) ? RDS(on)2= 36 mΩMAX. (VGS= 4.5 V, ID= 15 A) ? Low input capacitance ? Ciss

文件：237.64 Kbytes 頁(yè)數(shù)：8 Pages

RENESAS

瑞薩

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.47 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-CHANNEL MOSFET FOR SWITCHING

Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) ? Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) ? Hig

文件：218.67 Kbytes 頁(yè)數(shù)：8 Pages

RENESAS

瑞薩

N-CHANNEL MOSFET FOR SWITCHING

Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) ? Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) ? Hig

文件：218.67 Kbytes 頁(yè)數(shù)：8 Pages

RENESAS

瑞薩

N-CHANNEL MOSFET FOR SWITCHING

Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) ? Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) ? Hig

文件：218.67 Kbytes 頁(yè)數(shù)：8 Pages

RENESAS

瑞薩