4-port Din-rail Layer 3 Managed Ethernet switches

文件：522.679 Kbytes 頁數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

4-port Din-rail Layer 3 Managed Ethernet switches

文件：522.679 Kbytes 頁數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

4-port Din-rail Layer 3 Managed Ethernet switches

文件：522.679 Kbytes 頁數(shù)：3 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N-channel MOSFET 600V, 4A, 2.0Ω

Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 2.0Ω MAX. (VGS = 10 V, ID = 2.0 A) ? Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) ? High current ID(DC) = ±4.0

文件：264.73 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =4A RDS(ON)

文件：772.61 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

Dual SAM/SIM Interface Integrated Circuit

文件：329.42 Kbytes 頁數(shù)：40 Pages

ONSEMI

安森美半導(dǎo)體