RISC內(nèi)核 2.4G SOC芯片

◆MX53XX系列是低成本，高集成度的2.4G 無線收發(fā)芯片，采用GFSK調(diào)制。芯片集成RF收發(fā)、數(shù)據(jù)鏈路和低功耗的MCU。用戶通過 MCU向芯片發(fā)出指令，芯片自動完成收發(fā)配置進行通信，并根據(jù)應(yīng)答信息自動判斷數(shù)據(jù)放送/接收是否成功，從而進行重發(fā)，丟包，繼續(xù)發(fā)送和等待等操作，簡化了用戶程序。發(fā)射機支持功率可調(diào)，接收機有多種靈敏度選擇。 ◆多款產(chǎn)品不同的MCU硬件資源可供選擇；\r\n ◆RF功率可調(diào)范圍更寬，接收靈敏度更高；\r\n ◆大多芯片采用FLASH編程，便于開發(fā)；\r\n ◆極大減少外圍器件，成本更低；;

Mixic

中科芯億達

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. FEATURES ? Optical output power Po = 13.0 mW ? Low threshold current lth = 7 mA ? Differential Effici

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NEC

瑞薩

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

文件：173.6 Kbytes 頁數(shù)：7 Pages

CEL

LASER DIODE

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. APPLICATION ? FTTH PON (B-PON, G-PON

文件：241.98 Kbytes 頁數(shù)：9 Pages

RENESAS

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