絲?。?strong>MVG；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 頁數(shù)：6 Pages

MICROSEMI

美高森美

N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converter

文件：476.66 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Power MOSFET

Power MOSFET 30 V, 2.1 A, Single N?Channel, SOT?23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc?dc converters and power management in p

文件：148.43 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET

Power MOSFET 30 V, 2.1 A, Single N?Channel, SOT?23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc?dc converters and power management in p

文件：148.43 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET

文件：160.41 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET

文件：160.41 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET 30 V, 2.1 A, Single N??hannel, SOT??3

文件：124.39 Kbytes 頁數(shù)：5 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Power MOSFET 30 V, 2.1 A, Single N??hannel, SOT??3

文件：124.39 Kbytes 頁數(shù)：5 Pages

ETCList of Unclassifed Manufacturers

未分類制造商