SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8? devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ene

文件：245.52 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

P??hannel Power MOSFET

文件：288.97 Kbytes 頁數(shù)：12 Pages

ONSEMI

安森美半導體

P?Channel Power MOSFET

ONSEMI

安森美半導體

2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET

This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulator

文件：91.97 Kbytes 頁數(shù)：9 Pages

INTERSIL

COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION RT2P03M is a composite transistor with built-in bias resistor FEATURE ● Built-in bias resistor ( R1=10 KΩ , R2=10KΩ ) ● Mini package for easy mounting APPLICATION Inverted circuit , switching circuit , interface circuit , driver circuit

文件：54.02 Kbytes 頁數(shù)：3 Pages

ISAHAYA

諫早電子

Dual-P Enhancement Mode MOSFET

文件：516.44 Kbytes 頁數(shù)：4 Pages

SECOS

喜可士