isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.72 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Mosfet Transistor

DESCRITION ? Designed for high efficiency switch mode power supply. FEATURES ? Drain Current -ID= 6A@ TC=25°C ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on)= 1.2Ω (Max) ? Avalanche Energy Specified ? Fast Switching ? Simple Drive Requirement

文件：119.97 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS)

文件：153.57 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220

NJS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.73 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

TMOS E-FET? Power Field Effect Transistor N?Channel Enhancement?Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand

文件：156.71 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

Power Field Effect Transistor

文件：177.01 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Power Field Effect Transistor

ONSEMI

安森美半導(dǎo)體