| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS V? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t 文件:160.41 Kbytes 頁數(shù):8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. 文件:251.88 Kbytes 頁數(shù):3 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifi 文件:42.29 Kbytes 頁數(shù):3 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM TMOS V? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th 文件:161.79 Kbytes 頁數(shù):8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:301.82 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
N-Channel 60 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Logic-Level Gate Drive ? Fast Switching ? Compliant to RoHS Directive 2002/95/EC 文件:1.31377 Mbytes 頁數(shù):9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Power MOSFET 文件:202.4 Kbytes 頁數(shù):7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Power MOSFET 文件:207.21 Kbytes 頁數(shù):7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Power MOSFET 12 Amps, 60 Volts Power MOSFET 12 Amps, 60 Volts N–Channel TO–220\n12 AMPERES 50 VOLTS RDS(on)= 150 m?\n\nThis Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, t | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Minimum Operating Temperature:
-65°C
- Maximum Power Dissipation:
40000mW
- Maximum Operating Temperature:
175°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
60V
- Maximum Continuous Drain Current:
12A
- Material:
Si
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
19+ |
TO-220 |
17585 |
詢價 | |||
ON/安森美 |
25+ |
TO-220 |
32360 |
ON/安森美全新特價MTP3055即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
ON |
23+ |
TO-220 |
7000 |
原廠原裝正品 |
詢價 | ||
ON |
2450+ |
TO-220 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
MOT |
24+ |
2688 |
詢價 | ||||
TI |
25+ |
標(biāo)準(zhǔn)封裝 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 | ||
ON |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
ST |
24+ |
TO-220 |
30000 |
原裝現(xiàn)貨熱賣 |
詢價 | ||
ON |
23+ |
TO-220 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
ST |
23+ |
TO-220 |
5000 |
專做原裝正品,假一罰百! |
詢價 |
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