| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MTP10N40 | TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi 文件：249.4 Kbytes 頁(yè)數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | |
MTP10N40 | Power Field Effect Transistor
文件：85.2 Kbytes 頁(yè)數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
MTP10N40 | Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220 | NJS | NJS | |
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switchi 文件：249.4 Kbytes 頁(yè)數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
N-Channel 650 V (D-S) MOSFET 文件：1.033119 Mbytes 頁(yè)數(shù)：8 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N??hannel Enhancement??ode Silicon Gate 文件：234.83 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS N–Channel Enhancement–Mode Silicon Gate\nThis advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching a | 恩XP | 恩XP | ||
N?Channel Enhancement?Mode Silicon Gate | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Minimum Operating Temperature：
-65°C
- Maximum Power Dissipation：
125000mW
- Maximum Operating Temperature：
150°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
400V
- Maximum Continuous Drain Current：
10A
- Material：
Si
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 220 |
161089 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ON |
24+ |
N/A |
1850 |
詢價(jià) | |||
MOT |
06+ |
TO-220 |
3000 |
原裝庫(kù)存 |
詢價(jià) | ||
ON |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-TO-220 |
15400 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
MOTOLA |
23+ |
2800 |
正品原裝貨價(jià)格低 |
詢價(jià) | |||
ON |
25+ |
TO-TO-220 |
37650 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
ON |
26+ |
TO-220 |
6893 |
代理全系列銷(xiāo)售, 全新原裝正品,價(jià)格優(yōu)勢(shì),長(zhǎng)期供應(yīng),量大可訂 |
詢價(jià) | ||
ON |
24+ |
TO-220 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
- SI7941DP
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- SI7902EDN
- SI7998DP
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- SI7923DN
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- SPC5605BF1MLQ6
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- PS9313L2
- PS9309L2
- PS9308L2
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相關(guān)庫(kù)存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
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- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
