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          首頁 >MTH>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MTH8N50E

          TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate

          TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES rDS(on) = .0.8 OHMS 500 VOLTS

          文件:631.7 Kbytes 頁數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MTH8N50E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:293.04 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MTH8N55

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:292.8 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MTH8N55

          Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

          Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators converters, solenoid and realy drivers.

          文件:386.73 Kbytes 頁數(shù):5 Pages

          MOTOROLA

          摩托羅拉

          MTH8N60

          Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

          Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators converters, solenoid and realy drivers.

          文件:386.73 Kbytes 頁數(shù):5 Pages

          MOTOROLA

          摩托羅拉

          MTH8N60

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:293.64 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MTH8N90

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:293.67 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MTH8N90

          POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS

          Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Speeds — Switching Tim

          文件:394.83 Kbytes 頁數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MTH8N90

          Power Field Effect Transistor

          Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Speeds — Switching Tim

          文件:89.18 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          MTH_12

          MTH Series 5 x 3.2 Ceramic SMD Oscillator

          文件:107.75 Kbytes 頁數(shù):2 Pages

          MMD

          技術(shù)參數(shù)

          • InputVoltage:

            10 to 40 VDC

          • OutputVoltage:

            100V

          • OutputCurrent:

            10A

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          更多MTH供應(yīng)商 更新時間2026-1-20 11:02:00
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