TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

ISOTOP TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for hig

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MOTOROLA

摩托羅拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

恩XP

Power Field Effect Transistor

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive · DC-DC converter · power switch and solenoid drive

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ISC

無錫固電

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

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MOTOROLA

摩托羅拉