TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V DESCRIPTION ·motor drive, ·DC-DC converter, ·power switch and solenoid drive.

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ISC

無錫固電

絲印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features ? Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

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TECHPUBLIC

臺舟電子

Power MOSFET 6 Amps, 200 Volts N??hannel DPAK

文件：90.4 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導體

Power MOSFET 6 Amps, 200 Volts N??hannel DPAK

文件：90.4 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導體

Power MOSFET 6 Amps, 200 Volts N??hannel DPAK

文件：90.4 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導體

Power MOSFET 6 Amps, 200 Volts N??hannel DPAK

文件：90.4 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導體

功率 MOSFET，200V，6A，700mΩ，單 N 溝道，DPAK

此高級功率 MOSFET 適用于承受雪崩和換相模式下的高能量。新型能效設計還提供了具有快速恢復時間的漏極-源極二極管。此類器件專用于電源、轉(zhuǎn)換器和 PWM 電機控制中的低電壓、高速開關應用，尤其適用于二極管速度和換相安全運行區(qū)域非常關鍵的橋式電路，可針對非預期的瞬變電壓提供附加安全裕度。 ? Avalanche Energy Specified\n? Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n? Diode is Characterized for Use in Bridge Circuits\n? IDSS and VDS(on) Specified at Elevated Temperature\n? Pb-Free Packages are Available;

ONSEMI

安森美半導體

TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

恩XP