TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Sp

文件：231.95 Kbytes 頁數(shù)：10 Pages

MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：345.09 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

功率 MOSFET，150V，6A，300mΩ，單 N 溝道，DPAK

N 溝道增強模式硅門極 此功率 FET 適用于高速、低損耗電源開關(guān)應(yīng)用，如開關(guān)穩(wěn)壓器、轉(zhuǎn)換器、電磁和繼電器驅(qū)動器。 ? Silicon Gate for Fast Switching Speeds\n? Low RDS(on)0.3 W Max\n? RuggedSOA is Power Dissipation Limited\n? Source-to-Drain Diode Characterized for Use With Inductive Loads\n? Low Drive RequirementVGS(th) = 4.0 V Max\n? Surface Mount Package on 16 mm Tape;

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：359.29 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 200 V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 175 °C Junction Temperature ? PWM Optimized ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Primary Side Switch

文件：1.00989 Mbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

N??hannel Enhancement??ode Silicon Gate

文件：125.12 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體