isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

文件：346.88 Kbytes 頁(yè)數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po

文件：360.46 Kbytes 頁(yè)數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.55 Kbytes 頁(yè)數(shù)：2 Pages

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3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished

文件：69.22 Kbytes 頁(yè)數(shù)：8 Pages

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