N-Channel 650 V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

無(wú)錫固電

N??hannel Power MOSFET

文件：136.06 Kbytes 頁(yè)數(shù)：12 Pages

ONSEMI

安森美半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.08605 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N??hannel Power MOSFET

文件：136.06 Kbytes 頁(yè)數(shù)：12 Pages

ONSEMI

安森美半導(dǎo)體

N??hannel Power MOSFET

文件：136.06 Kbytes 頁(yè)數(shù)：12 Pages

ONSEMI

安森美半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.08609 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.08607 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

恩XP