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          首頁 >MTD1N40E>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MTD1N40E

          N-Channel 650 V (D-S) MOSFET

          文件:1.08607 Mbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          MTD1N40I

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

          文件:359.59 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHX1N40

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 1.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:318.25 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHX1N40

          PowerMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched

          文件:60.4 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          供應(yīng)商型號品牌批號封裝庫存備注價格
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          2447
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          3000
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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          更多MTD1N40E供應(yīng)商 更新時間2026-1-20 11:16:00
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