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    首頁 >MTD15N06>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    MTD15N06

    TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

    TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

    文件:179.79 Kbytes 頁數(shù):10 Pages

    MOTOROLA

    摩托羅拉

    MTD15N06

    TMOS POWER FET 15 AMPERES 60 VOLTS

    TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

    文件:218.7 Kbytes 頁數(shù):10 Pages

    MOTOROLA

    摩托羅拉

    MTD15N06

    TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

    恩XP

    恩XP

    MTD15N06V

    TMOS POWER FET 15 AMPERES 60 VOLTS

    TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

    文件:218.7 Kbytes 頁數(shù):10 Pages

    MOTOROLA

    摩托羅拉

    MTD15N06VL

    TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

    TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

    文件:179.79 Kbytes 頁數(shù):10 Pages

    MOTOROLA

    摩托羅拉

    MTD15N06V

    Power MOSFET

    文件:230.52 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MTD15N06V

    N-Channel 60 V (D-S) MOSFET

    文件:1.00427 Mbytes 頁數(shù):8 Pages

    VBSEMI

    微碧半導(dǎo)體

    MTD15N06V-1

    Power MOSFET

    文件:230.52 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MTD15N06VL

    Power MOSFET

    文件:273.42 Kbytes 頁數(shù):10 Pages

    ONSEMI

    安森美半導(dǎo)體

    MTD15N06VL-1

    Power MOSFET

    文件:273.42 Kbytes 頁數(shù):10 Pages

    ONSEMI

    安森美半導(dǎo)體

    詳細參數(shù)

    • 型號:

      MTD15N06

    • 制造商:

      MOTOROLA

    • 制造商全稱:

      Motorola, Inc

    • 功能描述:

      TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

    供應(yīng)商型號品牌批號封裝庫存備注價格
    ON
    24+
    30000
    詢價
    ON
    12+
    TO-252(DPAK)
    15000
    全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
    詢價
    ON
    23+
    TO-252
    11846
    一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
    詢價
    NEXPERIA/安世
    23+
    SOD523
    69820
    終端可以免費供樣,支持BOM配單!
    詢價
    VBsemi/臺灣微碧
    25+
    TO-252
    30000
    代理全新原裝現(xiàn)貨,價格優(yōu)勢
    詢價
    ON
    25+
    TO-252/D-
    32500
    普通
    詢價
    ON/安森美
    2022+
    TO-252
    10000
    原廠代理 終端免費提供樣品
    詢價
    MOTOROLA
    22+
    TO-252
    3000
    原裝正品,支持實單
    詢價
    ON/安森美
    20+
    TO-252
    32500
    現(xiàn)貨很近!原廠很遠!只做原裝
    詢價
    ON
    TO-252
    22+
    10000
    終端免費提供樣品 可開13%增值稅發(fā)票
    詢價
    更多MTD15N06供應(yīng)商 更新時間2026-1-22 15:30:00

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