TMOS POWER FET 32 AMPERES 60 VOLTS

TMOS V? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

無錫固電

N??hannel Power MOSFET

文件：263.99 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

N??hannel Power MOSFET

文件：263.99 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

TMOS POWER FET 32 AMPERES 60 VOLTS

恩XP

N?Channel Power MOSFET

ONSEMI

安森美半導(dǎo)體