| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MTB30P06 | TMOS POWER FET 30 AMPERES 60 VOLTS TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS 文件：247.61 Kbytes 頁數(shù)：10 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | |
MTB30P06 | TMOS V? Power Field Effect Transistor D2PAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHMTMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET d | 恩XP | 恩XP | |
Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an 文件：241.07 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
TMOS POWER FET 30 AMPERES 60 VOLTS TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS 文件：247.61 Kbytes 頁數(shù)：10 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an 文件：241.07 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an 文件：241.07 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an 文件：241.07 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
P-Channel Logic Level Enhancement Mode Power MOSFET 文件：294.22 Kbytes 頁數(shù)：9 Pages | CYSTEKEC 全宇昕科技 | CYSTEKEC | ||
P-Channel Enhancement Mode Power MOSFET 文件：414.85 Kbytes 頁數(shù)：8 Pages | CYSTEKEC 全宇昕科技 | CYSTEKEC | ||
P-Channel Enhancement Mode Power MOSFET 文件：414.85 Kbytes 頁數(shù)：8 Pages | CYSTEKEC 全宇昕科技 | CYSTEKEC |
詳細(xì)參數(shù)
- 型號(hào)：
MTB30P06
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 30 AMPERES 60 VOLTS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
30000 |
詢價(jià) | ||||
MOTOROLA |
22+ |
TO-263 |
3000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
ON |
13+ |
TO-263 |
2 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ON |
23+ |
TO-263 |
2 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ON |
23+ |
TO-263 |
12800 |
公司只有原裝 歡迎來電咨詢。 |
詢價(jià) | ||
ON |
2023+ |
TO-263 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價(jià) | ||
ON |
23+ |
TO-263 |
2 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ON |
22+ |
TO-263 |
20000 |
公司只做原裝 品質(zhì)保障 |
詢價(jià) | ||
ON |
12+ |
TO-263 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
STMICROELEC |
24+ |
2599 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
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