FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR

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MOTOROLA

摩托羅拉

Fully Isolated TMOS E-FET / Power Rifld Effect Transistor

恩XP

TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET? Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E

文件：266.59 Kbytes 頁數(shù)：10 Pages

MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

無錫固電

Power Field Effect Transister N-Channel Enhancement Mode Silicon Gate

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Speeds — Switching Times Specif

文件：175.09 Kbytes 頁數(shù)：5 Pages

MOTOROLA

摩托羅拉