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          首頁
                >MT5C1008>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          MT5C1008C-45LSLASH883C
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          MT5C1008C-45SLASH883C
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          MT5C1008C-55
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          MT5C1008C-55/883C
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          MT5C1008C-55L
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          MT5C1008C-55L/883C
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          MT5C1008C-55LSLASH883C
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          MT5C1008C-55SLASH883C
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          MT5C1008C-70
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          MT5C1008C-70/883C
          128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
          
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
FEATURES
? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
? Battery Backup: 2V data retentio
          文件：187.15 Kbytes 頁數(shù)：17 Pages
          AUSTIN
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號：
            MT5C1008
          • 制造商：
            AUSTIN 
          • 制造商全稱：
            Austin Semiconductor 
          • 功能描述：
            128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS 
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          
                
          



          ASID
          		

          24+
          		

          CLCC
          		

          25
          		

          		
詢價(jià)
          

          



          ASI
          		

          23+
          		

          CDIP
          		

          3200
          		

          絕對全新原裝!優(yōu)勢供貨渠道!特價(jià)!請放心訂購!
          		
詢價(jià)
          

          



          MT
          		

          25+
          		

          DIP
          		

          485
          		

          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          		
詢價(jià)
          

          



          ASI
          		

          23+
          		

          SOJ32
          		

          5000
          		

          原裝正品,假一罰十
          		
詢價(jià)
          

          



          micron
          		

          24+
          		

          N/A
          		

          6980
          		

          原裝現(xiàn)貨,可開13%稅票
          		
詢價(jià)
          

          



          ASID
          		

          25+
          		

          CLCC
          		

          18000
          		

          原廠直接發(fā)貨進(jìn)口原裝
          		
詢價(jià)
          

          



          MCT
          		

          24+/25+
          		

          		

          8
          		

          原裝正品現(xiàn)貨庫存價(jià)優(yōu)
          		
詢價(jià)
          

          



          MICRON
          		

          94+
          		

          DIP/32
          		

          100
          		

          原裝現(xiàn)貨海量庫存歡迎咨詢
          		
詢價(jià)
          

          



          MIT
          		

          25+
          		

          SOJ
          		

          2987
          		

          絕對全新原裝現(xiàn)貨供應(yīng)!
          		
詢價(jià)
          

          



          MICRON
          		

          新
          		

          		

          4
          		

          全新原裝 貨期兩周
          		
詢價(jià)
          

            
          
        
          
        
          更多MT5C1008供應(yīng)商
            更新時(shí)間2026-1-20 15:30:00
        
          
        
          
          
          
            
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