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首頁(yè) >MT5C1008>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
MT5C1008F-55	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN
MT5C1008F-55/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN
MT5C1008F-55L	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN
MT5C1008F-55L/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN
MT5C1008F-55LSLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN
MT5C1008F-55SLASH883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN
MT5C1008F-70	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN
MT5C1008F-70/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN
MT5C1008F-70L	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN
MT5C1008F-70L/883C	文件：187.15 Kbytes Page：17 Pages	128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio 文件：187.15 Kbytes 頁(yè)數(shù)：17 Pages	AUSTIN	AUSTIN

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詳細(xì)參數(shù)

型號(hào)：
MT5C1008
制造商：
AUSTIN
制造商全稱：
Austin Semiconductor
功能描述：
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	MT5C1008EC-20/883	ASID	24+	CLCC	25		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	MT5C1008C-20/883C	ASI	23+	CDIP	3200	絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!	詢價(jià)
深圳市卓越微芯電子有限公司	MT5C1008-25	MT	25+	DIP	485	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	MT5C1008DCJ-70	ASI	23+	SOJ32	5000	原裝正品,假一罰十	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	MT5C1008DJ15	micron	24+	N/A	6980	原裝現(xiàn)貨,可開(kāi)13%稅票	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	MT5C1008EC-20/883	ASID	25+	CLCC	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
深圳市聯(lián)世界科技有限公司	MT5C1008-25	MCT	24+/25+		8	原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)	詢價(jià)
上海鑫科潤(rùn)電子科技有限公司	MT5C1008-25	MICRON	94+	DIP/32	100	原裝現(xiàn)貨海量庫(kù)存歡迎咨詢	詢價(jià)
深圳市佳鑫美電子科技有限公司	MT5C1008DJ	MIT	25+	SOJ	2987	絕對(duì)全新原裝現(xiàn)貨供應(yīng)!	詢價(jià)
上海金慶電子技術(shù)有限公司	MT5C1008DJ-17	MICRON	新		4	全新原裝貨期兩周	詢價(jià)

更多MT5C1008供應(yīng)商更新時(shí)間2026-1-22 10:03:00

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