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    首頁(yè) >MT5C1005>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    MT5C1005F-35LSLASHIT

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    MT5C1005F-35LSLASHXT

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    MT5C1005F-40L/883C

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    MT5C1005F-40L/IT

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    MT5C1005F-40L/XT

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    MT5C1005F-40LSLASH883C

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    MT5C1005F-40LSLASHIT

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    MT5C1005F-40LSLASHXT

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    MT5C1005F-55L/883C

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    MT5C1005F-55L/IT

    256K x 4 SRAM SRAM MEMORY ARRAY

    GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance,

    文件:182.14 Kbytes 頁(yè)數(shù):13 Pages

    AUSTIN

    詳細(xì)參數(shù)

    • 型號(hào):

      MT5C1005

    • 制造商:

      AUSTIN

    • 制造商全稱:

      Austin Semiconductor

    • 功能描述:

      256K x 4 SRAM SRAM MEMORY ARRAY

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    更多MT5C1005供應(yīng)商 更新時(shí)間2026-1-22 8:21:00

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