DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES ? Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 頁數：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES ? Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 頁數：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES ? Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 頁數：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES ? Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 頁數：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES ? Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 頁數：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES ? Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 頁數：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES ? Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 頁數：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES ? Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 頁數：20 Pages

MICRON

美光

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES ? Single +3.3V ±0.3V power sup

文件：382.2 Kbytes 頁數：20 Pages

MICRON

美光