Mobile Double Data Rate (DDR) SDRAM

General Description The 256Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. On the x16 device, each of the 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. On the x32 de

文件：112.62 Kbytes 頁數(shù)：3 Pages

MICRON

美光

Mobile Double Data Rate (DDR) SDRAM

Micron

美光

Mobile Double Data Rate (DDR) SDRAM

General Description The 256Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. On the x16 device, each of the 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. On the x32 de

文件：112.62 Kbytes 頁數(shù)：3 Pages

MICRON

美光

Mobile DDR SDRAM MT46H16M16LF ??4 Meg x 16 x 4 banks MT46H8M32LF/LG ??2 Meg x 32 x 4 banks

文件：3.10137 Mbytes 頁數(shù)：79 Pages

MICRON

美光

LPDRAM

Micron

美光

LPDRAM

Micron

美光

Package：60-VFBGA；包裝：卷帶（TR） 類別：集成電路（IC） 存儲器 描述：IC DRAM 256MBIT PARALLEL 60VFBGA

Micron Technology Inc.

Package：60-VFBGA；包裝：卷帶（TR） 類別：集成電路（IC） 存儲器 描述：IC DRAM 256MBIT PARALLEL 60VFBGA

Micron Technology Inc.

Package：60-VFBGA；包裝：卷帶（TR） 類別：集成電路（IC） 存儲器 描述：IC DRAM 256MBIT PARALLEL 60VFBGA

Micron Technology Inc.