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          首頁 >MT4>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MT46V8M16TG-8

          DOUBLE DATA RATE DDR SDRAM

          GENERAL DESCRIPTION The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is e

          文件:2.54771 Mbytes 頁數(shù):68 Pages

          MICRON

          美光

          MT46V8M16TG-8L

          DOUBLE DATA RATE DDR SDRAM

          GENERAL DESCRIPTION The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is e

          文件:2.54771 Mbytes 頁數(shù):68 Pages

          MICRON

          美光

          MT47H128M4

          512Mb: x4, x8, x16 DDR2 SDRAM

          Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Duplicate output strobe (RDQS) option for x8 ? DLL to align DQ and DQS transitions with CK ? 4 internal banks for conc

          文件:2.16176 Mbytes 頁數(shù):135 Pages

          MICRON

          美光

          MT47H128M4

          DDR2 SDRAM

          Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Duplicate output strobe (RDQS) option for x8 ? DLL to align DQ and DQS transitions with CK ? 4 internal banks for conc

          文件:2.1618 Mbytes 頁數(shù):135 Pages

          MICRON

          美光

          MT47H128M8

          DDR2 SDRAM MT47H256M4 ??32 Meg x 4 x 8 banks MT47H128M8 ??16 Meg x 8 x 8 banks MT47H64M16 ??8 Meg x 16 x 8 banks

          DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

          文件:9.29855 Mbytes 頁數(shù):134 Pages

          MICRON

          美光

          MT47H128M8

          DDR2 SDRAM

          DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

          文件:9.27235 Mbytes 頁數(shù):131 Pages

          MICRON

          美光

          MT47H128M8CF-187EAT

          DDR2 SDRAM

          DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

          文件:9.27235 Mbytes 頁數(shù):131 Pages

          MICRON

          美光

          MT47H128M8CF-187EIT

          DDR2 SDRAM

          DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

          文件:9.27235 Mbytes 頁數(shù):131 Pages

          MICRON

          美光

          MT47H128M8CF-187EL

          DDR2 SDRAM

          DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

          文件:9.27235 Mbytes 頁數(shù):131 Pages

          MICRON

          美光

          MT47H128M8CF-25AT

          DDR2 SDRAM

          DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

          文件:9.27235 Mbytes 頁數(shù):131 Pages

          MICRON

          美光

          技術(shù)參數(shù)

          • VDRMVRRM(V):

            1600

          • VTM@ITMV/A:

            1.85/1500

          • ITSMKA10msTJM:

            12.5

          • VTO(V):

            0.80

          • RtmΩ:

            0.49

          • Rth(J-C)℃/W:

            0.08

          • OUTLINE:

            T6

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          SOP16S
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          更多MT4供應(yīng)商 更新時(shí)間2026-1-19 16:00:00
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