FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 頁數(shù)：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION\nThe MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a VP ? Eleven erase blocks:\n?? 16KB/8K-word boot block (protected)\n?? Two 8KB/4K-word parameter blocks\n?? Eight main memory blocks\n? Smart 3 technology (B3):\n?? 3.3V ±0.3V VCC\n?? 3.3V ±0.3V VPP application programming\n?? 5V ±10% VPP application/production programming1\n? Compatible with 0.3μm ;

Micron

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 頁數(shù)：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 頁數(shù)：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 頁數(shù)：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 頁數(shù)：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 頁數(shù)：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 頁數(shù)：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 頁數(shù)：30 Pages

MICRON

美光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

文件：416.14 Kbytes 頁數(shù)：30 Pages

MICRON

美光