首頁 >MT28F400B3>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MT28F400B3 | FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁數(shù):30 Pages | MICRON 美光 | MICRON | |
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁數(shù):30 Pages | MICRON 美光 | MICRON | ||
IC FLASH 4M PARALLEL 44SOP | Micron 美光 | Micron | ||
IC FLASH 4M PARALLEL 48TSOP I | Micron 美光 | Micron | ||
IC FLASH 4M PARALLEL 48TSOP I | Micron 美光 | Micron |
技術(shù)參數(shù)
- 存儲器格式:
閃存
- 技術(shù):
FLASH - NOR
- 存儲容量:
4Mb (512K x 8,256K x 16)
- 寫周期時間 - 字,頁:
80ns
- 訪問時間:
80ns
- 存儲器接口:
并聯(lián)
- 電壓 - 電源:
3V ~ 3.6V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝
- 封裝/外殼:
44-SOIC(0.496\,12.60mm 寬)
- 供應(yīng)商器件封裝:
44-SOP
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MT |
23+ |
TSSOP |
12300 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
MT |
SOP44 |
19 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | |||
MT |
16+ |
QFP |
4000 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
24+ |
SMD |
5000 |
公司存貨 |
詢價 | |||
MICR |
23+ |
SOP |
5000 |
原裝正品,假一罰十 |
詢價 | ||
MICRON |
24+ |
TSSOP |
5632 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
MICRON |
2016+ |
SOP44 |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
MICRON |
24+ |
TSOP |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
MICRON |
17+ |
SOP |
9888 |
全新進口原裝,現(xiàn)貨庫存 |
詢價 | ||
MICRON |
99+ |
SOP/44 |
21819 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 |
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