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          首頁 >MT28F008B3>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MT28F008B3

          FLASH MEMORY

          GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

          文件:416.14 Kbytes 頁數(shù):30 Pages

          MICRON

          美光

          MT28F008B3

          FLASH MEMORY

          Micron

          美光

          MT28F008B3SG-9B

          FLASH MEMORY

          GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

          文件:416.14 Kbytes 頁數(shù):30 Pages

          MICRON

          美光

          MT28F008B3SG-9BET

          FLASH MEMORY

          GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

          文件:416.14 Kbytes 頁數(shù):30 Pages

          MICRON

          美光

          MT28F008B3SG-9T

          FLASH MEMORY

          GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

          文件:416.14 Kbytes 頁數(shù):30 Pages

          MICRON

          美光

          MT28F008B3SG-9TET

          FLASH MEMORY

          GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

          文件:416.14 Kbytes 頁數(shù):30 Pages

          MICRON

          美光

          MT28F008B3VG-9B

          FLASH MEMORY

          GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

          文件:416.14 Kbytes 頁數(shù):30 Pages

          MICRON

          美光

          MT28F008B3VG-9BET

          FLASH MEMORY

          GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

          文件:416.14 Kbytes 頁數(shù):30 Pages

          MICRON

          美光

          MT28F008B3VG-9T

          FLASH MEMORY

          GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

          文件:416.14 Kbytes 頁數(shù):30 Pages

          MICRON

          美光

          MT28F008B3VG-9TET

          FLASH MEMORY

          GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

          文件:416.14 Kbytes 頁數(shù):30 Pages

          MICRON

          美光

          詳細(xì)參數(shù)

          • 型號:

            MT28F008B3

          • 制造商:

            MICRON

          • 制造商全稱:

            Micron Technology

          • 功能描述:

            FLASH MEMORY

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          24+
          5000
          公司存貨
          詢價(jià)
          N/A
          24+
          TSSOP
          5632
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
          詢價(jià)
          SAMSUNG
          23+
          TSOP
          8650
          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
          詢價(jià)
          SAMSUNG
          34
          TSOP
          416
          原裝正品
          詢價(jià)
          MICRON
          25+
          TSOP
          937
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價(jià)
          MICRON
          23+
          DIP-8P
          5000
          原裝正品,假一罰十
          詢價(jià)
          MICRO
          2016+
          SOP
          3000
          主營TI,絕對原裝,假一賠十,可開17%增值稅發(fā)票!
          詢價(jià)
          MT
          TSOP40
          26300
          全新原裝進(jìn)口自己庫存優(yōu)勢
          詢價(jià)
          MICRON
          1725+
          ?
          5600
          只做原裝進(jìn)口,假一罰十
          詢價(jià)
          MT
          17+
          TSOP48
          9988
          只做原裝進(jìn)口,自己庫存
          詢價(jià)
          更多MT28F008B3供應(yīng)商 更新時(shí)間2026-1-18 16:00:00
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