首頁(yè) >MT28F004B3>規(guī)格書(shū)列表
| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MT28F004B3 | FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁(yè)數(shù):30 Pages | MICRON 美光 | MICRON | |
MT28F004B3 | FLASH MEMORY | Micron 美光 | Micron | |
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁(yè)數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁(yè)數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁(yè)數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁(yè)數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁(yè)數(shù):30 Pages | MICRON 美光 | MICRON | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 文件:428.77 Kbytes 頁(yè)數(shù):30 Pages | MICRON 美光 | MICRON | ||
Package:40-TFSOP(0.724",18.40mm 寬);包裝:管件 類別:集成電路(IC) 存儲(chǔ)器 描述:IC FLASH 4MBIT PARALLEL 40TSOP I | Micron Technology Inc. | Micron Technology Inc. | ||
Package:40-TFSOP(0.724",18.40mm 寬);包裝:管件 類別:集成電路(IC) 存儲(chǔ)器 描述:IC FLASH 4MBIT PARALLEL 40TSOP I | Micron Technology Inc. | Micron Technology Inc. |
詳細(xì)參數(shù)
- 型號(hào):
MT28F004B3
- 制造商:
MICRON
- 制造商全稱:
Micron Technology
- 功能描述:
FLASH MEMORY
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MT |
2021+ |
TSOP |
6800 |
原廠原裝,歡迎咨詢 |
詢價(jià) | ||
9914+ |
TSOP |
7 |
原裝 |
詢價(jià) | |||
MICRON |
19+ |
TSOP |
32000 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
MT |
20+ |
TSOP |
2960 |
誠(chéng)信交易大量庫(kù)存現(xiàn)貨 |
詢價(jià) | ||
MICRON/美光 |
22+ |
TSOP |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價(jià) | ||
MT |
23+ |
TSOP |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) | ||
Lyontek |
23+24 |
BGA |
27960 |
原裝現(xiàn)貨.優(yōu)勢(shì)熱賣(mài).終端BOM表可配單 |
詢價(jià) | ||
MT |
2223+ |
TSOP |
26800 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn) |
詢價(jià) | ||
MT/興晶泰 |
25+ |
原廠原封可拆樣 |
65248 |
百分百原裝現(xiàn)貨 實(shí)單必成 |
詢價(jià) | ||
MT |
2410+ |
TSSOP |
3266 |
優(yōu)勢(shì)代理渠道 原裝現(xiàn)貨 可全系列訂貨 |
詢價(jià) |
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