FLASH MEMORY

GENERAL DESCRIPTION The MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the device is done with either a 3.3V

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MICRON

美光

2Mb SMART 3 BOOT BLOCK FLASH MEMORY

GENERAL DESCRIPTION\nThe MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the device is done with either a 3.3V o ? Five erase blocks:\n?? 16KB/8K-word boot block (protected)\n?? Two 8KB/4K-word parameter blocks\n?? Two main memory blocks\n? Smart 3 technology (B3):\n?? 3.3V ±0.3V VCC\n?? 3.3V ±0.3V VPP application programming\n?? 5V ±10% VPP application/production programming\n?? 12V ±5% VPP compatibil;

Micron

美光

SOP-44

MICRON

美光

上傳：深圳市恒達(dá)億科技有限公司

TSOP48

MICRON/美光

上傳：深圳龐田科技有限公司

LBGA-64

Micron/鎂光

上傳：深圳市興燦科技有限公司