Switchmode Ultra-fast Power Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * Low Power Loss，High Efficiency * Ultrafast 35 and 60 Nanosecond Recovery times

文件：1.40885 Mbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子

Switchmode Ultra-fast Power Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * Low Power Loss，High Efficiency * Ultrafast 35 and 60 Nanosecond Recovery times

文件：1.40885 Mbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子

Surface Mount Super Fast Recovery Rectifier

Features ? Superfast recovery times-epitaxial construction ? Low forward voltage, high current capability ? Low reverse current ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 6124

文件：350.16 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/msr2d/marking.html">MSR2D；Package：SMAF-C；Surface Mount Super Fast Recovery Rectifier

Features ? Superfast recovery times-epitaxial construction ? Low forward voltage, high current capability ? Low reverse current ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 6124

文件：350.16 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

Surface Mount Super Fast Recovery Rectifier

Features ? Superfast recovery times-epitaxial construction ? Low forward voltage, high current capability ? Low leakage ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standa

文件：329.62 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/m2a/marking.html">M2A；Package：SOD-123FL；Surface Mount Super Fast Recovery Rectifier

Features ? Superfast recovery times-epitaxial construction ? Low forward voltage, high current capability ? Low leakage ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standa

文件：329.62 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900

DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on a

文件：781.72 Kbytes 頁數(shù)：7 Pages

MICROSEMI

美高森美

Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

文件：517.58 Kbytes 頁數(shù)：7 Pages

MICROSEMI

美高森美

Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

文件：517.58 Kbytes 頁數(shù)：7 Pages

MICROSEMI

美高森美

Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

文件：517.58 Kbytes 頁數(shù)：7 Pages

MICROSEMI

美高森美