| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MSN6007F | Thermal Resistance,Junction-to-Case 文件：581.66 Kbytes 頁數(shù)：4 Pages | MORESEMI 摩矽半導(dǎo)體 | MORESEMI | |
MSN6007F | High Voltage MOS FETs | MORESEMI 摩矽半導(dǎo)體 | MORESEMI | |
NCE N-Channel Enhancement Mode Power MOSFET 文件：421.91 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON) 文件：431.63 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
Fast Recovery Rectifier, 40A, 200ns Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin 文件：20.66 Kbytes 頁數(shù)：2 Pages | NTE | NTE |
技術(shù)參數(shù)
- ID(A)：
7
- VDS(V)：
600
- VGS(V)：
±30
- Vt(V)：
3
- RDS(on) Max(Typ)( mΩ)_Vg=10V：
1200
- Package：
TO-220F
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MORESEMI |
2022+ |
TO-220F |
32500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
MORESEMI |
20+ |
TO-220F |
32500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價(jià) | ||
ST |
23+ |
DIP |
12000 |
全新原裝假一賠十 |
詢價(jià) | ||
HITACHI/日立 |
23+ |
MODULE |
11370 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
HITACHI |
24+ |
MODULE |
2050 |
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨 |
詢價(jià) | ||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
國產(chǎn) |
詢價(jià) | ||
MORESEMI |
22+ |
SOT-23 |
20000 |
只做原裝 |
詢價(jià) | ||
24+ |
5000 |
公司存貨 |
詢價(jià) |
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