| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MSN0214WE | 20V(D-S) N-Channel Enhancement Mode Power MOS FET 文件：659.19 Kbytes 頁數(shù)：7 Pages | MORESEMI 摩矽半導(dǎo)體 | MORESEMI | |
MSN0214WE | Low Voltage MOS FETs | MORESEMI 摩矽半導(dǎo)體 | MORESEMI | |
Very high voltage NPN power transistor Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology. Features ■ High gain ■ Very high voltage capability Applications ■ Haptic ■ High voltage solenoid driving 文件：133 Kbytes 頁數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
This programming manual provides information 文件：2.60947 Mbytes 頁數(shù)：245 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Features ? Low on-resistance ? Capable of 4.5 V gate drive ? High density mounting ? Pb-free ? Halogen-free Applications DC-DC conversion for PC and Server. 文件：260.8 Kbytes 頁數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS |
技術(shù)參數(shù)
- ID(A)：
14
- VDS(V)：
20
- VGS(V)：
±12
- Vt(V)：
0.7
- RDS(on) Max(Typ)( mΩ)_Vg=4.5V：
5
- RDS(on) Max(Typ)( mΩ)_Vg=2.5V：
6.2
- Package：
SOP-8
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
SOP-8 |
986966 |
國(guó)產(chǎn) |
詢價(jià) | ||
MORESEMI |
2022+ |
TO-252 |
32500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
MORESEMI |
20+ |
TO-252 |
32500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價(jià) |
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