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          首頁(yè) >MS3090K>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MS3090K

          N溝道 MOSFET

          MOSWAY

          謀仕微

          MOSWAY

          NCE3090K

          NCE N-Channel Enhancement Mode Power MOSFET

          Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =90A RDS(ON) =3.4mΩ (typical) @ VGS=10V RDS(ON) =6.9mΩ (typical) @ VGS=4.5V ● High density

          文件:620.18 Kbytes 頁(yè)數(shù):7 Pages

          NCEPOWER

          新潔能

          NCE3090K

          N-Channel 30-V (D-S) MOSFET

          文件:1.00247 Mbytes 頁(yè)數(shù):7 Pages

          VBSEMI

          微碧半導(dǎo)體

          NTE3090

          Optoisolator Schmitt Trigger Output

          Description: The NTE3090 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a high–speed integrated detector with a Schmitt Trigger output. This device is designed for applications requiring electrical isolation, fast response time, noise i

          文件:22.91 Kbytes 頁(yè)數(shù):2 Pages

          NTE

          技術(shù)參數(shù)

          • VDS(max):

            30

          • ID(max):

            90

          • PD(max):

            100

          • VGS(max):

            20

          • Rds(on)(typ)(@10V):

            3.2

          • Rds(on)(typ)(@4.5V):

            4.9

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          更多MS3090K供應(yīng)商 更新時(shí)間2026-1-20 11:06:00
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