PC Board Mountable Pressure Sensor

The MS1451 is a piezoresistive silicon pressure sensor packaged in a surface mount configuration. It is intended for high volume applications where small size, light weight, low cost, and compatibility with automated assembly equipment are required. FEATURES Surface Mount Package ±0.25

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TEC

泰科電子

RF & MICROWAVE TRANSISTORS 800-960 MHz BASE STATION APPLICATIONS

DESCRIPTION: The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in cellular base station applications. The MS1451 is designed as a medium power output device or as the driver for MS1452. Diffused emitter ballast resistors provide thermal s

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ADPOW

RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS

DESCRIPTION: The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. Features ? 800-900 MHz ? 24 VOLTS ? COMMON EMITTER ? GOLD METALLIZATION ? INTERNAL INPUT

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ADPOW

RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS

DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features

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RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS

DESCRIPTION: The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications. Features · Gold Metallization · Diffused Emitter Ballasting · Internal Input Matching · Des

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ADPOW

RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS

DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resis

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ADPOW

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1480 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V Class C UHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR capability under specified operating conditions. Features ? 470 MHz ? 12.5 VOLTS ? POUT = 45

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ADPOW

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1490 is a 12.5 volt silicon NPN transistor designed primarily for UHF communications. The device utilizes an emitter ballasted die geometry capable of operating into an infinite load VSWR under specified operating conditions. Features ? 512 MHz ? 12.5 VOLTS ? POUT = 50 W ?

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? For surface mounted applications ? Low profile package ? Built-in strain relief ? Metal to silicon rectifier. majority carrier conduction ? Low power loss,

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PANJIT

強茂

CONNECTORS, ELECTRIC, RECTANGULAR, NONENVIRONMENTAL, MINIATURE, POLARIZED SHELL, RACK AND PANEL, GENERAL SPECIFCATION FOR

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ITT