絲?。?strong>MS14；Package：VQFN；HEX SCHMITT-TRIGGER INVERTER

1FEATURES ? Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation ? Ioff Supports Partial-Power-Down Mode Operation ? Sub-1-V Operable ? Max tpd of 2 ns at 1.8 V ? Low Power Consumption, 10-mA Max ICC ? ±8-mA Output Drive at 1.8 V ? Latch-Up Perfo

文件：987.06 Kbytes 頁數(shù)：13 Pages

TI

德州儀器

絲?。?strong>MS14；Package：VQFN；HEX SCHMITT-TRIGGER INVERTER

1FEATURES ? Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation ? Ioff Supports Partial-Power-Down Mode Operation ? Sub-1-V Operable ? Max tpd of 2 ns at 1.8 V ? Low Power Consumption, 10-mA Max ICC ? ±8-mA Output Drive at 1.8 V ? Latch-Up Perfo

文件：987.06 Kbytes 頁數(shù)：13 Pages

TI

德州儀器

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? For surface mounted applications ? Low profile package ? Built-in strain relief ? Metal to silicon rectifier. majority carrier conduction ? Low power loss,

文件：109.87 Kbytes 頁數(shù)：3 Pages

PANJIT

強(qiáng)茂

SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER

FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? Metal to silicon rectifier. majority carrier conduction ? Guard ring for overvoltage protection ? Low power loss,high efficiency ? For surface mounted applications ? High current capacity ,Low forward

文件：6.09774 Mbytes 頁數(shù)：2 Pages

KISEMICONDUCTOR

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. KEY FEATURES ■ 150 MHz ■ 7.5 Volts ■ Common Emitter ■ POUT = 2.5 W Min. ■ GP = 11.0 dB Gain APPLICATIONS/BE

文件：51.47 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美

RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION: The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. Features ? 150 MHz ? 7.5 Volts ? Common Emitter ? POUT = 2.5 W Min. ? GP = 11.0 dB Gain

文件：91.88 Kbytes 頁數(shù)：3 Pages

ADPOW

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. KEY FEATURES ? 450 - 512 MHz ? 12.5 Volts ? Efficiency 55 ? POUT =

文件：61.25 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美

RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features ? 450 - 512 MHz ? 12.5 Volts ? Efficiency 55 ? POUT = 2.

文件：90.34 Kbytes 頁數(shù)：3 Pages

ADPOW

RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION: The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. Features ? 175 MHz ? 7.5 Volts ? Common Emitter ? POUT = 1.4 W Min. ? GP = 7.0 dB Gain

文件：91.31 Kbytes 頁數(shù)：3 Pages

ADPOW

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. KEY FEATURES ? 175 MHz ? 7.5 Volts ? Common Emitter ? POUT = 1.4 W Min. ? GP = 7.0 dB Gain APPLICATIONS/BENEFI

文件：176.21 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美