絲?。?strong>MS126；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub 1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：992.9 Kbytes 頁數(shù)：14 Pages

TI

德州儀器

絲?。?strong>MS126；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub 1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：992.9 Kbytes 頁數(shù)：14 Pages

TI

德州儀器

Power Film Resistors

[CADDOCK ELECTRONICS, INC.] Power Film Resistor Family with Wide Resistance Range and +275°C Maximum Temperature With power ratings to 22 Watts and voltage ratings as high as 6,000 volts in an axial-lead resistor with values to 30 Megohms, the Type MS Power Film Resistors deliver the performanc

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ETCList of Unclassifed Manufacturers

未分類制造商

RF & MICROWAVE TRANSISTORS VHP MOBILE APPLICATIONS

DESCRIPTION: The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metallized, emitter ballasted die geometry for superior reliability and infinite VSWR capability. ? Features ? 175 MHz ? 12.5 VOLTS ? POUT

文件：106.14 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

DESCRIPTION: The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metallized, emitter ballasted die geometry for superior reliability and infinite VSWR capability. ? Features ? 175 MHz ? 12.5 VOLTS ? POUT

文件：97.37 Kbytes 頁數(shù)：3 Pages

ADPOW

RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1263 is a NPN silicon RF power transistor designed for 12.5-volt UHF amplifier applications operating to 512 MHz. The MS1263 has internal impedance matching for broadband operation and diffused emitter ballast for high load VSWR tolerance. Features · 512 MHz · 12.5

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ADPOW

Type MS Power Film Resistors

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CADDOCK