RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers. Features ? Fully Implanted Base and Emitter Structure. ? High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz ? Low Noise Figure – 1.3dB @ 1GHz ? Ftau - 8.0 GHz @ 6v, 30mA ? Cost Effective Macro X Package

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MICROSEMI

美高森美

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF951 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.0 GHz. FEATURES: ? Low Noise Figure ? High Gain ? Omnigold? Metalization System

文件：27.06 Kbytes 頁數(shù)：1 Pages

ASI

NPN SILICON RF TRANSISTOR

ASI Semiconductor

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. ? Fully Implanted Base and Emitter Structure ? 18 Finger, 1.25 Micron Geom

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MOTOROLA

摩托羅拉

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF951V3 is Designed for high gain. Low noise small-signal amplifiers applications up to 2.0 GHz. FEATURES: ? Low Noise Figure ? High Gain ? Omnigold? Metalization System

文件：48.31 Kbytes 頁數(shù)：1 Pages

ASI

NPN SILICON RF TRANSISTOR

ASI Semiconductor