NPN Silicon Low Noise, High-Frequency Transistors

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MOTOROLA

摩托羅拉

NPN Silicon Low Noise, High Frequency Transistor

Overview Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.\n Archived content is no longer updated and is made available for historical reference only. \n?Fully Implanted Base and Emitter Structure\n?9 Finger, 1.25 Micron Geometry with Gold Top Metal\n?Gold Sintered Back Metal\n?Available in tape and reel packaging options:\n\n?T1 suffix = 3,000 units per reel\n\n?T3 suffix = 10,000 units per reel;

恩XP

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. ? Fully Implanted Base and Emitter Structure ? 9 Finger, 1.25 Micron Geome

文件：309.76 Kbytes 頁(yè)數(shù)：17 Pages

MOTOROLA

摩托羅拉

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. ? Fully Implanted Base and Emitter Structure ? 9 Finger, 1.25 Micron Geome

文件：309.76 Kbytes 頁(yè)數(shù)：17 Pages

MOTOROLA

摩托羅拉

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. ? Fully Implanted Base and Emitter Structure ? 9 Finger, 1.25 Micron Geome

文件：309.76 Kbytes 頁(yè)數(shù)：17 Pages

MOTOROLA

摩托羅拉

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. ? Fully Implanted Base and Emitter Structure ? 9 Finger, 1.25 Micron Geome

文件：309.76 Kbytes 頁(yè)數(shù)：17 Pages

MOTOROLA

摩托羅拉

NPN Silicon Low Noise, High Frequency Transistor

Overview Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.\n Archived content is no longer updated and is made available for historical reference only. \n?Fully Implanted Base and Emitter Structure\n\n?9 Finger, 1.25 Micron Geometry with Gold Top Metal\n\n?Gold Sintered Back Metal\n\n?Available in tape and reel packaging options:\n?T1 suffix = 3,000 units per reel.;

恩XP

NPN Silicon Low Noise, High Frequency Transistor

Overview Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.\n Archived content is no longer updated and is made available for historical reference only. \n?Fully Implanted Base and Emitter Structure\n\n?9 Finger, 1.25 Micron Geometry with Gold Top Metal\n\n?Gold Sintered Back Metal\n\n?Available in tape and reel packaging options:\n?T1 suffix = 3,000 units per reel.;

恩XP