945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com

文件：393.45 Kbytes 頁(yè)數(shù)：12 Pages

MOTOROLA

摩托羅拉

945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com

文件：393.45 Kbytes 頁(yè)數(shù)：12 Pages

MOTOROLA

摩托羅拉

945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com

文件：393.45 Kbytes 頁(yè)數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：364.72 Kbytes 頁(yè)數(shù)：11 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：364.72 Kbytes 頁(yè)數(shù)：11 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：455.06 Kbytes 頁(yè)數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：455.06 Kbytes 頁(yè)數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

OverviewReplaced by MRF9060NR1(NBR1). There are no form, fit or function changes with this part replacement. The MRF9060MR1 and MRF9060MBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make \n?Typical Performance at 945 MHz, 26 Volts\nOutput Power: 60 Watts PEP\n\tPower Gain: 18.0 dB\n\tEfficiency: 40% (Two Tones)\n\tIMD: –31.5 dBc\n\n?Integrated ESD Protection\n\n?Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power\n\n?Excellent Thermal Stability\n\n?Characte;

恩XP

945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

MRF9060NR1 Not Recommended for New Design. Possible Replacement Part: MRFE6S9045NR1, MRFE6S9060NR1. ? Typical Performance at 945 MHz, 26 VoltsOutput Power: 60 Watts PEPPower Gain: 18.0 dBEfficiency: 40% (Two Tones)IMD: –31.5 dBc\n? Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power\n? Excellent Thermal Stability\n? Characterized with Series Equivalent Large–Signal Impeda;

恩XP

945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line\nRF Power Field Effect Transistors\nN–Channel Enhancement–Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–

恩XP