RF POWER TRANSISTOR NPN SILICON

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MOTOROLA

摩托羅拉

NPN Silicon RF Power Transistor

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

900 MHz, 150 W, 26 V RF Power Transistor

Overview MRF899 removed from active portfolio.Possible Replacement Part: MRF9180R6.The MRF899 is designed for 26 VoltUHF large–signal, common emitter, Class ABlinear amplifier applications in industrial andcommercial FM/AM equipment operating in the range800–960 MHz. \n?Specified 26 Volt, 900 MHz Characteristics\nOutput Power = 150 Watts (PEP)\nMinimum Gain = 8.0 dB @ 900 MHz, Class AB\n Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)\n Maximum Intermodulation Distortion\n?–28 dBc @ 150 Watts (PEP)\n?Characterized with Series Equivalent Large–Signal\nPar;

恩XP

Trans GP BJT NPN 28V 25A 5-Pin NI-860C3

NJS