NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF892 is Designed for Class AB, Cellular Base Station Applications up to 900 MHz. FEATURES: ? Internal Input Matching Network ? PG =8.5 dB at 14 W/900 MHz ? Omnigold? Metalization System

文件：14.7 Kbytes 頁數(shù)：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF892 is Designed for Class AB, Cellular Base Station Applications up to 900 MHz.FEATURES:\n? Internal Input Matching Network\n? PG =8.5 dB at 14 W/900 MHz\n? Omnigold? Metalization System

ASI Semiconductor

OPA892 2-GHz, 10-V/V Stable, 0.95-nV/√Hz, Ultra-Low THD Operational Amplifier

1 Features ? Ultra-low 0.95-nV/√Hz voltage noise ? High speed: – 2-GHz gain-bandwidth product – 700-V/μs slew rate – 30-ns settling time (0.1) ? Stable at gains ≥10 V/V ? Output drive, IO = 200 mA (typical) ? Very low distortion: – THD = –78 dBc (f = 1 MHz, RL = 150 Ω) – THD+N = –114 dBc

文件：1.14398 Mbytes 頁數(shù)：24 Pages

TI

德州儀器

OPAx892 2GHz, 10V/V Stable, 0.95nV/√Hz, Ultra-Low THD Operational Amplifiers

1 Features ? Ultra-low 0.95nV/√Hz voltage noise ? High speed: – 2GHz gain-bandwidth product – 700V/μs slew rate – 30ns settling time (0.1%) ? Stable at gains ≥10V/V ? Output drive, IO = 200mA (typical) ? Very low distortion: – THD = –78dBc (f = 1MHz, RL = 150Ω) – THD+N = –114dBc (f =

文件：1.17751 Mbytes 頁數(shù)：27 Pages

TI

德州儀器

OPA892 2-GHz, 10-V/V Stable, 0.95-nV/√Hz, Ultra-Low THD Operational Amplifier

1 Features ? Ultra-low 0.95-nV/√Hz voltage noise ? High speed: – 2-GHz gain-bandwidth product – 700-V/μs slew rate – 30-ns settling time (0.1) ? Stable at gains ≥10 V/V ? Output drive, IO = 200 mA (typical) ? Very low distortion: – THD = –78 dBc (f = 1 MHz, RL = 150 Ω) – THD+N = –114 dBc

文件：1.14398 Mbytes 頁數(shù)：24 Pages

TI

德州儀器