NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. ? Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

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MOTOROLA

摩托羅拉

800-960 MHz, 3.6 W (CW), 24 V RF Power Transistor, Class A

Overview The MRF858S is designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz.MRF858S removed from active portfolio. Possible Replacement Part: MRF9002R2. \n?Specified for VCE = 24 Vdc,\nIC = 0.5 Adc Characteristics\n Output Power = 3.6 Watts CW\nMinimum Power Gain = 11 dB\n Minimum ITO = +44.5 dBm\n Typical Noise Figure = 6 dB\n?Characterized with Small–Signal S–Parameters\nand Series Equivalent Large–Signal Parameters\nfrom 800–960 MHz\n?Silicon Nit;

恩XP

GLASS PASSIVATED SUPER FAST RECTIFIER

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JINGHENG

晶恒

GLASS PASSIVATED SUPER FAST RECTIFIER

FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ? Fast switching for high efficiency ? Low forward voltage drop ? Single rectifier construction ? High surge capability ? For use in low voltage ,high frequency inverters, free wheeling ,and polarity pro

文件：56.6 Kbytes 頁數(shù)：2 Pages

JINGHENG

晶恒

3 WATT GLASS ZENER DIODES

FEATURES ● Microminiature package. ● Voidless hermetically sealed glass package. ● Triple layer passivation. ● Metallurgically bonded. ● High performance characteristics. ● Stable operation at temperature to 200°C ● Very low thermal impedance.

文件：71.18 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美