2.0 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20060R is designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of this device makes it ideal for large?signal, common emitter class AB amplifier applications. This dev \n?Guaranteed Two?tone Performance at 2000 MHz, 26 Volts\n Output Power ? 60 Watts (PEP)\n\tPower Gain ? 9.8 dB\n\tEfficiency ? 33%\n\tIntermodulation Distortion ?\n\t???32 dBc\n?Characterized with Series Equivalent Large?Signal Impedance Parameters\n?S?Parameter Characterization at High Bias Le;

恩XP

2.0 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20060RS is designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of this device makes it ideal for large–signal, common emitter class AB amplifier applications. This de \n?Guaranteed Two–tone Performance at 2000 MHz, 26 Volts\n Output Power — 60 Watts (PEP)\n\tPower Gain — 9.8 dB\n\tEfficiency — 33%\n\tIntermodulation Distortion —\n\t??–32 dBc\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Le;

恩XP

RF POWER BROADBAND NPN BIPOLAR

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GENESIC