Wirewound Resistors, Non-Magnetic,Non-Inductive, Axial Lead

文件：82.81 Kbytes 頁數(shù)：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

Rack & Panel

文件：4.66234 Mbytes 頁數(shù)：93 Pages

WINCHESTER

溫徹斯特

Power dissipation up to 2W

文件：301.36 Kbytes 頁數(shù)：2 Pages

OHMITE

絲印：MRA；Package：DO-214AC；13 To 40V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01% High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response ti

文件：2.31636 Mbytes 頁數(shù)：5 Pages

UNSEMI

優(yōu)恩半導體

絲印：MRA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.90188 Mbytes 頁數(shù)：6 Pages

UNSEMI

優(yōu)恩半導體

絲印：MRA；Package：DO-214AA；Transient Voltage Suppressors

600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant Features Glass passivated chip High reliability application and automotive

文件：1.58939 Mbytes 頁數(shù)：4 Pages

LUGUANG

魯光電子

絲?。?strong>MRA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：917.49 Kbytes 頁數(shù)：3 Pages

LUGUANG

魯光電子

絲印：MRA；Package：SMB；Surface Mount Transient Voltage Suppressors

文件：277.03 Kbytes 頁數(shù)：3 Pages

ANOVA

林朋科技

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. FEATURES: ? Omnigold? Metalization System ? Diffused Ballast Resistors. ? Internal Matching Network

文件：51.53 Kbytes 頁數(shù)：1 Pages

ASI

UHF POWER TRANSISTOR

The RF Line UHF Power Transistor Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. ? Designed for Class AB Linear Power Amplifiers ? Specified 28 Volt, 1000 MHz Characteristics: Output Power — 50 Watts Power Gain —

文件：60.51 Kbytes 頁數(shù)：4 Pages

MOTOROLA

摩托羅拉